2024.04.24
3358
P6 SiC MOSFET power module, voltage level covers 1200V and 750V types, 1200V module RDS(on) contains 2.9mΩ, 2.2mΩ, 750V module RDS(on) contains 1.7mΩ, 1.3mΩ.The internal multi-SiC chip parallel design is adopted, and the current sharing of the chip is ensured by the series gate resistor.The module adopts a low-inductance design to avoid oscillation, with an output current of 480-640A for 1200V and 485-630A for 750V.The SiC chip adopts double-sided silver paste sintering and copper wire bonding process, and the AMB heat dissipation insulation substrate and PINFIN heat dissipation substrate of Si3N4 ensure good heat dissipation capacity.The module has passed the 175°C AQG-324 reliability certification, and can work in the 175°C junction temperature environment for a long time.
